Principal Medium Voltage Power MOSFET Design Engineer
Renesas Electronics - Seoul, , Korea, republic of
Posted Jun 12, 2026
Benefits
- Parental leave
- Not verified
- Non-birth-parent leave
- Not verified
- Family-building benefits
-
- Fertility benefits: Not verified
- Adoption assistance: Not verified
- Surrogacy assistance: Not verified
- Mental health support
- Not verified
- Relocation assistance
- Not verified
- Childcare support
- Not verified
- Learning budget
- Not verified
- Verification
- Not verified checked Jun 7, 2026
- Salary
- Not verified
- 401(k) match
- Reported from DOL Form 5500 industry filing (not employer-specific)
Was this benefit information wrong? Tell us.
Market context
- U.S. role benchmark (BLS OEWS)
- $111,944 U.S. median for this role
- Projected growth (BLS Employment Projections)
- +13.7% - Much faster than average
Matched to SOC 15-1252 - Data and ML aggregate by role bucket.
Source: U.S. Bureau of Labor Statistics, OEWS, May 2024 and Employment Projections, 2024-2034.
Schedule
- Shift type
- Not verified
- Weekend work
- Not verified
Application
- Cover letter
- Not verified
- Assessment
- Not verified
- Deadline
- Not stated
Where they hire
State eligibility is not yet verified.
About this role
Principal Medium Voltage Power MOSFET Design Engineer Seoul, , Korea, republic of Company Description: Job Description: Job Summary: We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Design Team. The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with process integration team, application team , marketing team and external foundry partners to drive innovation, optimize performance, and accelerate product industrialization. Key Responsibilities: Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology Develop TCAD simulation decks and propose advanced device design concepts Analyze wafer-level electrical test results and package-level performance data for each development iteration Lead yield improvement activities and support technology transfer to mass production Contribute to the development of derivative products based on established and mature technology platforms Qualifications: Ph.D. (preferred) or M.S. in Electrical Engineering, Physics, or a related field Up to 15 years of experience in power semiconductor device or process development, preferably with a focus on Si-based MV shielded-gate trench MOSFETs Solid understanding of power device physics and semiconductor fabrication processes Hands-on experience with TCAD tools and simulation-based device analysis Intermediate-level proficiency in both written and spoken English Additional Information: Renesas is an embedded semiconductor solution provider driven by its Purpose ' To Make Our Lives Easier .' As the industry's leading expert in embedded processing with unmatched quality and system-level know-how, we have evolved to
Read the full description at jobs.smartrecruiters.com. FewerJobs shows a preview and links to the original posting.
Apply link not verified; last-live date unavailable.
What verified means
Verified means a displayed claim has field-level provenance to a source FewerJobs pulled: a government or employer source, or the original job posting. Posting-sourced facts are employer-stated and are labeled separately from government records.
Related jobs
-
Service Engineer
Viavi Solutions INC - Seoul Gasan-Dong, KOR
-
Sr. Field Application Engineer
Arrow Financial CORP - KR-Seoul, Korea (Centerpoint Seocho)
-
MFG.PRODUCTION ASSOCIATE - LEVEL I
Atmus Filtration Technologies INC - Korea, Republic of
-
Observability Solutions Architect - Splunk
Cisco - Seoul, Republic of Korea